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A semifloating-gate transistor had been proposed and its memory function has been demonstrated recently. In this paper, we further investigate its temperature dependency, device scalability, and device modeling. The high-temperature behavior is studied by measuring its endurance, retention, and disturbance immunity at 85 °C. The device scalability down to the 14-nm technology node is investigated...
A single-transistor active pixel image sensor compatible with dual-poly-gate technology is investigated in this paper. The integration compatibility is studied by integrating this device using EEPROM fabrication processes. The operation mechanism, light sensing performance, and non-destructive reading of this image sensor will be discussed.
A new signal-selective direction finding algorithm which exploits the property of the cyclostationarity of incoming signals is proposed. After dimensionality reducing by projecting the observed array data onto the signal subspace, the array manifold matrix is identified by the simultaneous diagonalization structure of the matrix pencil consisting of the cyclic correlation matrix and the cyclic conjugate...
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