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Temperature rising which originates from self‐heating degrades the electrical characteristics, reliability, and lifetime of high‐power GaN‐HEMTs. In this article, a systematic analytical approach for thermal evaluation of microwave GaN‐HEMTs is constructed through combining and scrutinizing some of the basic static thermal analysis methods to provide a deeper insight into the process of the channel...
This paper presents an 8.8–9.8 GHz hybrid power amplifier (PA) designed with GaN HEMT bare die transistors. Generally, hybrid X-band high power amplifier (HPA) suffers from relatively low bandwidth. However, this paper introduces wideband high gain power amplifier, by using low loss Wilkinson combiner/divider, a modified form of taper-based divider, and wideband matching structures. The optimum values...
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