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Temperature rising which originates from self‐heating degrades the electrical characteristics, reliability, and lifetime of high‐power GaN‐HEMTs. In this article, a systematic analytical approach for thermal evaluation of microwave GaN‐HEMTs is constructed through combining and scrutinizing some of the basic static thermal analysis methods to provide a deeper insight into the process of the channel...
This paper describes some of the most important design considerations such as: transistor and substrate selection for high power, matching network design and stabilization of microwave power amplifiers with discrete die transistor in X-band frequency. According to these considerations, a 30-watt power amplifier with a GaN-HEMT transistor over 8.8 to 9.8GHz has been designed and fabricated. The power...
This paper presents the first implementation of hybrid 8.8–9.6 GHz X-band class J power amplifier (PA) designed with a GaN HEMT power transistor. High efficiency power amplifiers suffer from nonlinear performance and relatively low bandwidth. The proposed high efficiency class J power amplifier provides larger bandwidth and more convenient linearity performance. The class J PAs should have appropriate...
This paper presents an 8.8–9.8 GHz hybrid power amplifier (PA) designed with GaN HEMT bare die transistors. Generally, hybrid X-band high power amplifier (HPA) suffers from relatively low bandwidth. However, this paper introduces wideband high gain power amplifier, by using low loss Wilkinson combiner/divider, a modified form of taper-based divider, and wideband matching structures. The optimum values...
Design and simulation of a low power ultra wide band doubly balanced 2× sub-harmonic direct conversion mixer in a 0.18-µm CMOS technology is presented. The basic idea of the proposed mixer is adopted from the conventional Gilbert cell mixer, with two modifications incorporated. The first is that each of the switching quad transistors is replaced with a pair of transistors where their two drains, and...
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