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Fabricating ultrathin silicon (Si) channels down to critical dimension (CD) <10 nm, a key capability to implementing cutting‐edge microelectronics and quantum charge‐qubits, has never been accomplished via an extremely low‐cost catalytic growth. In this work, 3D stacked ultrathin Si nanowires (SiNWs) are demonstrated, with width and height of Wnw = 9.9 ± 1.2 nm (down to 8 nm) and Hnw = 18.8 ± 1...
Droplet Control
In article number 2204390, Linwei Yu and co‐workers successfully demonstrate stacked growth integration of ultrathin silicon nanowires, with width and height of Wnw = 9.9 ± 1.2 nm (down to 8 nm) and Hnw = 18.8 ± 1.8 nm approaching to the critical‐dimension of 10 nm technology node, thanks to a self‐delimited droplet control strategy, with tunable channel cross‐sections, which are ideal...
GaN‐based lateral Schottky barrier diodes (SBDs) have attracted great attention for high‐power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra‐high voltage (UHV) applications. Then, a golden question...
Schottky Barrier Diodes
GaN is a promising candidate for next‐generation power electronic devices, but its potential is far from being realized. In article number 2107301, Peng Chen, Rong Zhang, Youdou Zheng, and co‐workers demonstrate a high power figure‐of‐merit, 10.6‐kV AlGaN/GaN lateral Schottky barrier diode with single channel, and sub‐100‐μm anode‐to‐cathode spacing without any other additional...
Degraded population inversion (PI) at elevated temperature, regarded as an important temperature degradation factor in terahertz quantum cascade lasers (THz QCL), has hindered the widespread use of these devices. Herein, the mechanism of the temperature degradation of PI is investigated microscopically. It is demonstrated that the limited extraction efficiency of the extraction system dominates the...
Wearable flexible sensors based on integrated microfluidic networks with multiplex analysis capability are emerging as a new paradigm to assess human health status and show great potential in application fields such as clinical medicine and athletic monitoring. Well‐designed microfluidic sensors can be attached to the skin surface to acquire various pieces of physiological information with high precision,...
Interfaces in semiconductor heterostructures is of continuously greater significance in the trend of scaling materials down to the atomic limit. Since atoms tend to behave more irregularly around interfaces than in internal materials, accurate energy band alignment becomes a major challenge, which determines the ultimate performance of devices. Therefore, a comprehensive understanding of the interplay...
Ordered porous RuO2 materials with various pore structure parameters are prepared via a hard‐template method and are used as the carbon‐free cathodes for Li‐O2 batteries under the voltage cutoff cycle mode. The influences of pore structure parameters of porous RuO2 on electrochemical performance are systematically studied. Results indicate that specific surface area and pore size determine the specific...
Black phosphorus nanobelts are fabricated with a one‐step solid–liquid–solid reaction method under ambient pressure, where red phosphorus is used as the precursor instead of white phosphorus. The thickness of the as‐fabricated nanobelts ranges from micrometers to tens of nanometers as studied by scanning electron microscopy. Energy dispersive X‐ray spectroscopy and X‐ray diffraction indicate that...
Delivering and releasing anticancer agents directly to their subcellular targets of action in a controlled manner are almost the ultimate goal of pharmacology, but it is challenging. In recent decades, plenty of efforts have been made to send drugs to tumor tissue or even specifically to cancer cells; however, at the subcellular scale, cancer cells have multiple cunning ways to hinder drugs from reaching...
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