Schottky Barrier Diodes
GaN is a promising candidate for next‐generation power electronic devices, but its potential is far from being realized. In article number 2107301, Peng Chen, Rong Zhang, Youdou Zheng, and co‐workers demonstrate a high power figure‐of‐merit, 10.6‐kV AlGaN/GaN lateral Schottky barrier diode with single channel, and sub‐100‐μm anode‐to‐cathode spacing without any other additional structures, which gives a clear and positive answer that GaN can be used in ultra‐high voltage applications.