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We demonstrate strong nonlinearities of n2 = 8 × 10−15 cm2 W−1 in single crystal silicon carbide at a wavelength of 2360nm. We use a high confinement SiC waveguide fabricated using a modified smart-cut process.
We report the first on-chip integrated mid-infrared frequency comb using a silicon optical parametric oscillator ring resonator. We demonstrate a 750-nm-wide comb centered at 2.6 um.
We introduce novel SOI waveguides with a Si3N4 top cladding for nonlinear photonics in the mid-infrared wavelength region. We demonstrate continuous-wave frequency conversion via four-wave mixing and obtain a conversion bandwidth of over 300 nm.
We demonstrate wavelength conversion of 40-Gb/s DPSK signals across a 105-nm range in a dispersion-engineered silicon waveguide with 1.83-dB average power penalty, further confirming broadband and format-transparent parametric-processing potential in silicon.
We demonstrate supercontinuum generation (SCG) spanning from telecom to mid-infrared wavelengths beyond 3.6 μηι, using a silicon-on-insulator wire waveguide, which represents the first octave-spanning SCG from a silicon chip.
We experimentally demonstrate a FWM-based receiver operating at long wavelengths. The scheme successfully demultiplexes a 1866-nm 40-Gb/s NRZ signal into 10-Gb/s tributaries while simultaneously wavelength-converting it to 1320 nm for photodetection.
We demonstrate tunable wavelength conversion of 10-Gb/s data with up to 168-nm probe-idler separation based on four-wave mixing in silicon nanowires. We incorporate an NRZ-to-RZ format change using a pulsed pump and achieve error-free operation.
We report continuous-wave wavelength conversion from the telecom band to the mid-infrared via four-wave mixing in silicon nanowaveguides. We convert a 1636-nm signal to produce a 2384-nm idler, demonstrating a parametric bandwidth of 748 nm.
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