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We discuss recent experimental and theoretical results that report on the observation of dipole-forbidden intra-exciton transitions in semiconductors via terahertz excitation. Additional manipulation capabilities are gained through the application of a magnetic field.
Terahertz‐induced intra‐exciton transitions are studied in semiconductor quantum‐well systems under the influence of a constant magnetic field. A systematic description is developed to include carrier–carrier interactions, terahertz transitions, and magnetic‐field effects to the exciton‐correlation dynamics.
When a magnetic field is present, the exciton states and energies are changed directly and...
This paper discusses recent studies involving time‐resolved optical and terahertz (THz) fields in the linear and nonlinear regime. An overview of the microscopic modeling scheme is presented and applied to analyze a variety of experimental results. The examples include coherent excitons in weak and strong THz fields, Rabi splitting and ionization of intra‐excitonic transitions, THz studies in semiconductor...
Transitions between the 1s and 2p levels of the fundamental heavy-hole exciton in GaAs quantum wells, followed by scattering into the 2s state, are investigated by resonant THz excitations using a free-electron laser. We report on the external control of this intra-excitonic population transfer by an external magnetic field.
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