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The impact of utilizing silicon oxide (SiO2) strain layer on NPN-SiGe-HBT device's electrical properties and frequency response has been studied using TCAD modeling. Simulations based on hydrodynamic (HD) model have been carried out to clarify the impact of utilizing SiO2 strain layer in the collector region on the device performance. Simulation results show that NPN-SiGe-HBT device employing SiO2...
We proposed a new nonplanar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress, both from the underlaying SiGe 3-D islands and from the stressed capping layers. We show that more than 80% and 50% higher mobilities of holes and electrons, respectively,...
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