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In this work, the performance of thin silicon carbide membranes as material for radiation hard X‐ray beam position monitors (XBPMs) is investigated. Thermal and electrical behavior of XBPMs made from thin silicon carbide membranes and single‐crystal diamond is compared using finite‐element simulations. Fabricated silicon carbide devices are also compared with a 12 µm commercial polycrystalline diamond...
Technology Computer-Aided Design is widely used for the development and optimization of advanced device formation. Ion implantation and thermal annealing are the main focus of dopant profile simulation for process technologies. In this paper, we review the current continuum modeling capabilities and calibration for ion implantation and thermal processes, including Monte Carlo ion implantation, co-implantation,...
In TCAD process simulation, the Poisson equation for electrostatic potential is usually solved in silicon and polysilicon regions, assuming a zero normal component of electric field (ZEF) boundary conditions (BCs) at material interfaces. This is correct for a free (or covered only with dielectric) flat surface of silicon, which is typical for 1D SIMS profile simulations. However, it is inaccurate...
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