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Deeply-etched distributed Bragg reflectors are demonstrated experimentally on silicon with mirror bandwidth that is larger than 170 nm. The reflector is realized by two layers of silicon 1-μm thick separated by a 1.95-μm air gap. Etching depth of 80 μm was obtained with side-wall angle better than 0.05 degree and scalloping peak-to-peak roughness of 15 nm. An optical filter was formed by two reflectors...