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This paper assesses the 6-T SRAM performance and provides the design methodology with stacked gate-all-around silicon nanowire (NW) MOSFETs. To achieve high density design while preserving performance, different numbers of stacked NW MOSFETs are investigated via three-dimensional TCAD simulation. Due to tradeoff between read stability and writeability margins, adjusting the relative strengths of the...
Gate-all-around (GAA) MOSFETs relevant for the 11.9-nm CMOS technology node are optimized with device dimensions following the scale length rule. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for these well-tempered GAA structures. The tradeoff between read stability and write-ability of 6-T static RAM cell designs...
Optimal design for nanowire FETs beyond 22 nm technology node is presented using numerical 3D simulation and physical analysis. Our results suggest that design optimization associated with the wire diameter could achieve performance benefits in the nanowire FET technologies. Small wire diameter is not necessary for performance, though it favors device scaling.
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