The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance...
It is possible to delay the growth mode transition from a 2-D growth mode to 3-D growth mode (the so-called Stranski–Krastanov growth mode) by means of non-equilibrium growth process employing a low growth temperature and a high growth rate, and adopting a high V/III ratio simultaneously to maintain crystal quality. Record emission wavelengths in multiple InGaAs/GaAs quantum wells without a strain-compensated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.