The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this study, a high-pressure magnetron sputtering plasma was used for plasma discharge with various discharge powers in the mixture of argon-nitrogen discharge. The introduction of nitrogen gas modifies the discharge leading to modifications of plasma parameters and ionization mechanism of transition species. The observation of relative emission of argon and titanium spectral line was using an optical...
Radio-frequency magnetron sputtering using a Cu target was used to deposit cuprous oxide and cupric oxide thin films on silicon wafer. The substrate bias voltage and the O2 flow ratio were varied during the deposition. The deposited thin films were characterized using scanning electron microscope. We found that the spherical and pyramid shapes structure of copper oxide thin films were deposited at...
Cuprous oxide and cupric oxide thin films were deposited on silicon wafer with additional substrate bias voltage using radio-frequency magnetron sputtering of a Cu target with Ar+O2 discharge plasma. Optical emission spectroscopy was employed to monitor the intensity of atomic Cu and O emission lines at various substrate bias voltages and oxygen flow ratios. Thin film transition from cuprous oxide...
During the fabrication of ultra large scale integrated (ULSI) circuits, Ti and TiN thin films are used as diffusion seed and barrier layers in Cu metal contacts. They are often deposited using magnetron sputtering technique where energetic ions bombard the target surface to release the target material. In ionized physical vapor deposition (IPVD) system, the sputtered atoms are ionized in the plasma...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.