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Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was...
Thin ITO-based PET conductive membranes are the major sensing structure in resistive touch panels for network phones or other applications. However, device failures or malfunctions such as early touch and disagreement between force-applied and touched locations have been reported. By examining the surface profiles, it was found that these membranes have considerable initial out of plane deformation...
This paper presents a study of applying the equivalent effective voltage concept according to IEEE Standard 1459-2010 for determining reference compensation currents of the three-phase three-wire shunt active power filter in the a-b-c reference frame. The APF reference current calculator is developed and is realized on the DSP board through processor-in-the-loop simulation for validating the effectiveness...
Thin ITO-based PET conductive membranes are the major sensing structure in resistive touch panels for network phones or other applications. However, device failures or malfunctions such as early touch and disagreement between force-applied and touched locations have been reported. By examining the surface profiles, it was found that these membranes have considerable initial out of plane deformation...
This paper presents an approach of incorporating hardware-in-the-loop simulation and ADALINE for shunt active power filter (APF) design. Even when the three-phase source voltages are unbalanced and/or distorted and supply to a nonlinear load, the described compensation strategy can compensate the harmonic and neutral current, and thus improve the power factor. After verifying the efficiency of compensation...
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