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In this paper, we present a high performance planar 20nm CMOS bulk technology for low power mobile (LPM) computing applications featuring an advanced high-k metal gate (HKMG) process, strain engineering, 64nm metal pitch & ULK dielectrics. Compared with 28nm low power technology, it offers 0.55X density scaling and enables significant frequency improvement at lower standby power. Device drive...
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is...
A 64 Mb spin-transfer-torque MRAM in 65 nm CMOS is developed. A 47 mm2 die uses a 0.3584 ??m2 cell with a perpendicular-TMR device. To achieve read-disturb immunity for the reference cell, a clamped-reference scheme is adopted. An adequate-reference scheme is implemented to suppress read-margin degradation due to the resistance variation of reference cells.
Today NAND flash memory is used for data and code storage in digital cameras, USB devices, cell phones, camcorders, and solid-state disk drives. To satisfy the market demand for lower cost per bit and higher density nonvolatile memory, in addition to technology scaling, 2 b/cell MLC technology was introduced. Recently MLC NAND flash memories with more than 2 b/cell have been reported. To meet market...
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