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Three primary colors LEDs with a high directional radiation beam profile will be effectively utilized for projection type LED displays. In this light, we notice that InGaN-based nanocolumn LEDs exhibit excellent innate qualities of RGB emission control by the structural parameter of nanocolumn 1, 2), as well as directional radiation property3). GaN nanocolumns were self-assembled by rf-plasma molecular...
GaN nanocolumns were first self-assembled by rf-plasma molecular beam epitaxy (rf-MBE) in 19971) and were applied for the fabrication of visible 2, 3) to ultraviolet 4) nanocolumn LEDs on Si, by integrating the InGaN/GaN multiple quantum wells (MQWs) in those. In the self-assembled nanocolumn LEDs, however, the diameter and position of nanocolumns were randomly deviated, frequently resulting in multi-color...
520–565 nm wavelength stimulated emissions were successfully obtained under room temperature (RT) optical excitation for triangular-lattice GaN-based nanocolumn arrays, in which InGaN/GaN multiple-quantum-well (MQW) was integrated at the top of each nanocolumn. The GaN nanocolumn array was prepared with selective area growth (SAG) of rf-plasma assisted molecular beam epitaxy (rf-MBE); the diameter...
In x Al 1−x N nanocolumns (x In =0.73–1.00) of c-axis orientation were successfully self-organized on Si (111) substrates by RF-plasma-assisted molecular-beam epitaxy (RF-MBE). The height, diameter and density of nanocolumns were 0.7–1.1μm, 40–130nm, and 0.7–3.0×10 10 cm −2 , respectively. With increasing In composition from 0.73 to 1.00, the room-temperature...
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