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The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the on-chip amplifier is proposed. The methodology shows high efficiency and tolerance in the adiabatic coupler...
Rare earth ion doped potassium double tungstate gain materials have recently shown a great promise for the development of waveguide amplifiers and lasers exhibiting excellent performance. To enable the use of this material in larger nanophotonic platforms, sharp bends are required. In this work we study the effect of the anisotropy of potassium double tungstates on the bend losses of high contrast...
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