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The purpose of our work is to develop a power module using gas insulation and bonding-less interconnections to avoid the reliability issues known to current packaging technology. This paper deals with the temperature dependence of partial discharge inception voltage (PDIV) of a developed module up to 300 °C. In addition, an attempt is achieved to confirm half-wave rectifying operation up to 300 °C...
This paper deals with I-V characteristics of SiC-SBD and rectifying capabilities of four SiC-SBD using a new package under the temperature up to 300 °C. As regards of the I-V characteristics, as the temperature increases, the threshold voltage decreases and the reverse current increases dramatically. This increase of the reverse current of the diodes under study leads to the limitation of the rectifying...
This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the...
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