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A D-Band downconverter implemented in a 130-nm SiGe BiCMOS technology is presented. The mixer is based on a double-balanced Gilbert cell topology with emitter-follower based output IF buffers. The chip includes an integrated 3-stage LO buffer and RF/LO LC-baluns for single-ended on-wafer measurements. Measurements show a peak conversion gain (CG) of 11 dB at 170 GHz, and an input-referred 1 dB compression...
We present a measured current-mode logic ring oscillator gate delay of 2.3 ps, a record for digital circuits in silicon-based technologies. This result was achieved in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology operating at 25 K. In addition to higher cutoff frequency and lower collector-base capacitance, lower base resistance is also responsible for the improved...
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