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This paper presents a 430 GHz source implemented in a 0.13-µm SiGe BiCMOS technology with fT/fmax of 300 GHz/450 GHz. The source comprises a fundamental differential Colpitts cascode oscillator at 215 GHz driving a balanced common-collector doubler that utilizes inductive 2nd-harmonic feedback at the emitter output in order to boost the generated 2nd-harmonic current. The doubler is co-designed with...
An E-band power amplifier is demonstrated in an evaluation version of a fT/fmax 300-GHz/450-GHz SiGe:C BiCMOS technology. Eight-way power combining of the outputs of transformer-matched differential-cascode unit cells is used in the final stage of the amplifier. A breakout of the final stage yields a measured small-signal gain of 14 dB at 80 GHz with a 16-GHz bandwidth, whereas a version of the amplifier...
A single-chip 325-GHz ×18 frequency multiplier chain based on two cascaded active differential triplers and a balanced output doubler is presented. The multiplier operates over a 317 to 328 GHz bandwidth with a 0-dBm 18-GHz input signal. A peak output power of -8 dBm is obtained at 325 GHz. The multiplier chain is realized in an evaluation SiGe HBT technology with cut-off frequencies fT/fmax of 250...
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