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In this work, we investigate the robustness of 1-transistor-1-resistor (1T1R) synaptic array to implement a low-precision neural network. The experimental results on 1 kb HfOx-based RRAM array show a large on/off ratio (i.e. > 105×) and 5 stable resistance states can be reliably achieved with 10× window between adjacent two states. As the RRAM has the resistance drift over time under read voltage...
A physics-based compact device model is developed for the conducting-bridge random-access memory (CBRAM). By considering the dependence of ion migration velocity on the electric field, the vertical and lateral growth/dissolution dynamics for the metallic filament are investigated. Both time-dependent transient and “quasi-static” switching characteristics of the CBRAM are captured. Moreover, the I-...
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