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Due to the large bandgap and high electron mobility properties, AlGaN/GaN high electron mobility transistor (HEMT) has become one of the most promising candidates for the future generation of power electronic applications. Besides, AlGaN/GaN HEMT grown on Si substrate not only reduces the production cost but also prepares for the possible combination of GaN devices and Si technology. High quality...
Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology. The outstanding low...
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (InxGa1-xAs)m/(InAs)n superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular In_xGa_1 - xAs channel, the superlattice-channel HEMTs...
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