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Within AT&T, III-V compound semiconductor crystals are used for the manufacture of photonic and high-speed integrated circuit devices. But commercial processes have limitations that prevent them from producing crystals of the quality these devices require. Therefore, AT&T has developed the vertical-gradient-freeze (VGF) technique into a process that can produce large, high-quality gallium...
A new technique, called the Gault process, has been developed at AT&T Engineering Research Center for growing large, single crystals of gallium arsenide, gallium phosphide, and indium phosphide. It can produce seeded, 50-mm diameter crystals that have lower dislocation densities and more uniform properties at all levels of doping than crystals grown by existing methods. In this paper, we describe...