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In this paper, a three-dimensional (3D) chip bonding technology using Cu-Sn solder was described. First of all, the interdiffusion process of elemental Cu and Sn in the bonding region was discussed, and some key factors were identified to influence the performances of bonding layer: temperature, pressure, atmosphere and annealing time. Scanning electron microscopy (SEM) and optical microscopy were...
Cu-Cu thermocompression bonding has become an important technology for 3D packaging and integration. In this paper, a novel low temperature thermocompression bonding technology using nanostructure Cu layer was presented. By selective dealloying of Cu-Zn alloy in dilute hydrochloric acid, porous nanostructure Cu layer was fabricated on silicon substrate. Scanning electron microscopy (SEM) and X-ray...
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