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As CMOS continues to approach the physical limits of silicon, interest has greatly increased in the use of high mobility alternatives for devices beyond the 14 nm technology node. By virtue of their high electron and hole mobilities, InGaAs and Ge respectively have emerged as the most promising candidates for n- and p-MOS but the co-integration of these materials on the same Si wafer remains a significant...
By taking into account simultaneously the effects of border traps and interface states, the authors model the alternating current capacitance–voltage (– ) behavior of high-mobility substrate metal–oxide–semiconductor (MOS) capacitors. The results are validated with the experimental and InP/high- ( –) curves. The simulated...
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