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GaN RF technology has continued to demonstrate state-of-the-art power, efficiency, linearity, and low-noise performance in RF and mm-wave band. Here, we report on a multi-octave (100 MHz–8 GHz), linear nonuniform distributed amplifier (NDPA) in a MMIC architecture using scaled 120-nm short-gate-length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform distributed amplifier approach,...
We report on a multi-octave (100 MHz–8 GHz), linear nonuniform distributed amplifier (NDPA) in a MMIC architecture using scaled 120-nm short-gate-length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform distributed amplifier approach, where each cell consists of main and gm3 cells. The small signal gain was >10 dB over the band, with saturated CW output power of ∼35 dBm at...
We report on multi-octave (100 MHz – 8 GHz) GaN HEMT nonuniform distributed amplifier (NDPA) with and without linearization in a MMIC architecture for the first time. The NDPAs were fabricated with 0.14-μm field-plate AlGaN/GaN HEMT technology with fT of 58 GHz and breakdown voltage of 90 – 100 V. The NDPAs were built with six sections in a nonuniform distributed amplifier approach. The small signal...
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