The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This study investigates the heat generation behavior of packaged normally-on multi-finger AlGaN/GaN high electron mobility transistors (HEMTs) that are cascoded with a low-voltage MOSFET (LVMOS) and a SiC Schottky barrier diode (SBD). By foremost carrying out electro-thermal simulation and related thermal measurements with infrared thermography and Raman spectroscopy for basic 5mm GaN HEMTs, the location...
AlGaN/GaN high electron mobility transistors (HEMTs) are one of the prospective candidates for high switching frequency power electronics applications thanks to its wide band gap (3.4eV), high breakdown voltage, large critical electric field, high carrier mobility, and the inherent high speed characteristics. With the high power densities that AlGaN/GaN HEMTs are capable of reaching, heat dissipation...
This work presents thermal resistance constitution evaluation and electrical experiments for AlGaN/GaN HEMTs packaging device. The investigation of thermal resistance is based on the closed-form expression heat transfer model. Actual multi-fingers structure and thermal resistance was modeled. The Infrared thermography is utilized to observe heat distribution of the packaged GaN device by measuring...
This paper presents the packaging development of high power AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. Our packaging structure is designed on the device periphery surface for enhancing Si substrate thermal dissipation. The effects of structure design and fabrication processes on the device...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.