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This paper systematically analyzed and optimized the operation parameters of low current 1T1R RRAM arrays. Considering both thermal and electrical field driven effects, a current and voltage joint verification strategy has been proposed. Highly uniform multilevel resistive switching performances with LRS resistance higher than 100kΩ and HRS resistance higher than 10MΩ were obtained on 130nm CMOS process...
In this letter, TiN/TaO$_{\mathrm {\mathbf {y}}}$ /Ta2O5–x/Pt-based resistive switching devices were fabricated and tested. Short time high-resistance state instability phenomenon was observed during pulse programming verification measurement. This instability phenomenon was observed in about a minute after the RESET operation for high resistance states. In contrast, the measured low-resistance states...
A RRAM cell integrated with a selector was fabricated. The device with 1S1R structure has Pt/Al2O3/NbO2/TaOy/Ta2O5-x/Pt stacks. Al2O3 serves as the current compliance layer. NbO2 layer works as the threshold switching selector. TaOy is the base layer for resistive switching. The RRAM switching is based on the conduction filaments formed and ruptured in the Ta2O5-x layer. For the fabricated device,...
Doping effects of Al, Si, P, and S on the key resistive switching performances for Ta2O5−x/TaOy based bilayer RRAM devices were studied systematically. Forming voltages were reduced by Si, P, and S dopants. Uniformity of ON/OFF resistance and operational voltages for the doped devices was improved. P doped devices exhibit the best resistive switching performances including forming voltage uniformity,...
Pulsed programming measurements were carried out to study the abrupt differences between the SET/RESET processes of the AlOx/WOy bilayer RRAM devices. Electrical measurement results showed that both SET and RESET switching are affected by the applied pulse amplitude. But the RESET operation has a strong relation with the pulse width. Calculation results indicate the RESET step needs more energy than...
Stable bipolar RRAM devices were fabricated using bi-layer tantalum (Ta) oxide deposited by reactive magnetron sputtering at room temperature with asymmetric oxygen profiles. Impacts of oxygen profiles on the resistive switching characteristics were investigated through varying tantalum oxide thickness and oxygen partial pressure during tantalum oxide deposition. A preferred oxygen profile for tantalum...
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