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The overall purpose of this paper is the investigation of the impact of individual transistor parameters on the most important class-E power amplifier performance characteristics. The very advanced and physics-based compact model HICUM/L2 v2.22 was used. The changes in power added efficiency and transducer power gain provide insight about how sensitive the circuit is to inaccuracies in model parameter...
This paper describes a physics-based methodology for computationally efficient statistical modeling of high-frequency bipolar transistors along with its practical implementation into a production process design kit. Applications to statistical modeling, circuit simulation, and yield optimization are demonstrated for an opamp circuit. Experimental results are shown that verify the methodology
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