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In this paper we engineer the programming method at 10μA in Cu/Al2O3-based CBRAM to reduce the bit dispersion and the state instability over time. Despite its large median value, the overall HRS/LRS ratio in these devices can be drastically reduced due to the LRS and HRS dispersion, especially in a low-current regime. For this reason, in this study we adopt a statistical approach, focusing on the...
In this work, we present a systematic electrical characterization of TiN\HfO2\Hf\TiN RRAM elements from the variability perspective. Variability of both programmed resistance values and switching triggering voltages has been evaluated on small scaled cells in a wide operating current range (2µA till 500µA's), for different oxide stacks, in DC and pulsed conditions. For the first time device-to-device...
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