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This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise simulation...
In this paper, we will present a comprehensive analysis of low frequency noise in InGaP/GaAs HBT transistor, which is developed in two main axes: first, we report a study of the low frequency noise characteristics of InGaP/GaAs HBT. Our measurements were performed over the frequency range from 100 Hz to 10 MHz, under different biasing conditions and over the temperature range from 300°K to 375°K at...
Low frequency (LF) noise and especially trap assisted GR noise in semiconductor devices does not affect only the performances of radio frequency (RF) and microwave transmitters (oscillators) but also that of receivers (local oscillators, mixers). Measurement and simulation characterization tools of semiconductor devices become crucial in order to optimize their characteristics and circuit performances...
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