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Variability is a critical concern for the stability and yield of SRAM with minimized size. We present a study of a 14 nm node SOI FinFET SRAM cell under the influence of statistical variability and random charge trapping due to positive/negative bias temperature instability (P/NBTI). Low channel doping is believed to be one of the main advantages of FinFETs in reducing statistical variability, but...
We investigate the impact of negative-bias temperature instability (NBTI) on the degradation of the static noise margin (SNM) and write noise margin (WNM) of a SRAM cell. This is based on the quantitative simulation of the statistical impact of NBTI on p-MOSFETs corresponding to a 45-nm low-power technology generation. Due to the increasing importance of positive-bias temperature instability (PBTI)...
Quantitative simulations of the statistical impact of negative-bias-temperature-instability (NBTI) on pMOSFETs, and positive-bias-temperature-instability (PBTI) on nMOSFETs are carried out for a 45nm low power technology generation. Based on the statistical simulation results, we investigate the impact of NBTI and PBTI on the degradation of the static noise margin (SNM) of SRAM cells. The results...
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