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In this paper we discuss the numerous metrology and inspection challenges that need to be overcome to really have high volume manufacturing of 3D integrated chips. The key metrology and inspections issues are addressed module wise. We start with the TSV module then move on to the wafer bonding and thinning module. This is followed by the bumping module, de-bonding module and finally we finish with...
The race to gallium-on-silicon (GaN-on-Si) has been a heated one simply because growth of defect-free GaN-on Si is not an easy problem. The main impetus for this stack comes from a combination of factors, including the ability to use large and cheaper substrates and access to automated back-end manufacturing tools in depreciated IC fabs. Study of the different types of defects during GaN epitaxy is...
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