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The electrothermal instability (ETI) arises whenever a current-carrying material has a resistivity that depends on temperature. When resistivity, η, increases with increasing temperature, ETI causes striations to form perpendicular to the direction of current. On pulsed-power-driven, ablating metallic loads, this process can cause sections of the target to ablate earlier than the bulk material, creating...
Joule heating limits the operation of most current carrying components and devices, especially in nanoscale circuits such as carbon nanofiber based field emitters, graphene electronics, and nanolasers [1]. For many materials of interest it is important to consider the temperature dependence of the thermal and electrical conductivities when calculating the effects of Joule heating. We examine the effects...
This paper contrasts the very different spreading resistance and current crowding behaviors between horizontal and vertical thin film contact. Both Cartesian and circular contacts are analyzed. Accurate analytical scaling laws have been obtained for arbitrary aspect ratios and resistivity ratios, and validated against known limits, numerical simulations and experiments.
The spreading resistance of a microscopic area of contact (the “-spot”) located in a thin film is studied for both Cartesian and cylindrical geometries. The effect of film thickness on the spreading resistance is evaluated over a large range of aspect ratios. In the limit , the normalized thin-film spreading resistance converges to the finite values, i.e...
Contact resistance is important to integrated circuits and thin film devices, carbon nanotube based cathodes and interconnects, field emitters, wire-array z-pinches, metal-insulator-vacuum junctions, and high power microwave sources, etc. In other applications, the electrical contacts are formed by thin film structures of a few microns thickness, such as in micro-electromechanical system (MEMS) relays...
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