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GaN devices for high‐frequency and high‐power applications often need n‐doped GaN layers on top of their structures. Such layers can be either grown in an epitaxial reactor or formed by implantation or annealing of Si‐containing layers (e.g., a SiO2 mask). These processes are typically performed at high temperatures, which generate the undesired effect of atom diffusion between the different epitaxial...
This paper contents a novel approach on investigations of bacterial contamination by fluorescent microscopy. Incipiently presenting the motivation and state-of-the-art methods of germ analysis, the challenges and solutions in hardware construction design are pointed out. The fluorescent microscope developed in inverse setup consists necessarily of an image acquisition system and a positioning system...
A GaN high electron mobility transistor technology with a gate length of 0.25 µm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5–3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5...
A GaN high electron mobility transistor technology with a gate length of 0.25 µm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5–3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5...
A digital switch-mode amplifier MMIC integrating an differential amplifier and driver was realized in an 100 nm GaN technology with a transit frequency of 80 GHz. The circuit operates up to a bit rate of 12 Gbps while it was designed for a current-mode amplifier chain. Each of the two driver output channels delivers an adjustable output voltage swing of up to 5 VPP. Due to the differential amplifier...
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