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The charge trapping and detrapping characteristics of the fluorinated hafnium oxide/oxynitride (HfO2/SiON) gate stack are investigated. Although incorporation of fluorine in the bulk stack had been proven to eliminate both bulk and interface trap densities due to Hf-F and Si-F bond formation, respectively, the effective trapping barrier of the device with fluorine incorporation (1.29 eV) is deeper...
In this paper, the reliability of the fluorinated hafnium oxide (HfO2) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore...
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