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A new analytical static drain current model based on the WKB approximation has been developed for Schottky-Barrier CNTFETs. Electron scattering by acoustic and optical phonons in the channel has been taken into account. By using a simple approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical expression for the drain current in the Landauer-Büttiker...
RF-linearity at device level is becoming increasingly valuable for future communication systems. It has recently been reported that Schottky barrier (SB) CNTFETs offer high linearity under realistic conditions. In this paper, the potential of SB-CNTFETs for high RF-linearity is studied. The latter demands a compromise between excellent Schottky barrier control and high extrinsic high-frequency performance...
Carbon nanotube field-effect transistors are expected to be beneficial for analog high-frequency applications due to, among others, their inherent linearity and, thus, very low signal distortion. Achieving this linearity has so far been assumed to depend on meeting the following conditions: Ballistic single-subband transport, ohmic contacts, and quantum capacitance limited operation<xref ref-type="fn"...
The injection of charges into the channel of a carbon nanotube (CNT) field effect transistor (FET), and, hence, the overall device behavior are strongly affected by the interface between the CNT and the metall contacts and the tube portion underneath the metall contacts (contact region). The properties of the interface and the contact region depend on details of the fabrication process and the materials...
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