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Misorientation of two layers of bilayer graphene leaves distinct signatures in the electronic properties and the phonon modes. The effect on the thermal conductivity has received the least attention and is the least well understood. In this work, the in-plane thermal conductivity of misoriented bilayer graphene (m-BLG) is investigated as a function of temperature and interlayer misorientation angle...
The present analysis for base transit time of a modern high-speed npn bipolar transistor is done for Gaussian-doped base considering doping dependence of mobility, bandgap narrowing effect and carrier velocity saturation effect at base-collector junction using analytical process. This paper analyzes the base transit time of a Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) considering...
A compact analytical model of minority carrier -concentration is presented for an exponentially-doped quasi-neutral region of Silicon solar cell. It is an iteration-free and integral-free mathematical expression that addresses the non-uniformity in doping and contribution from terrestrial solar spectrum. Due to the position dependency of transport parameters, the differential equation becomes intractable...
A three dimensional model of SOI p-channel four gate transistor has been developed using device simulator Silvaco/ATLAS. Threshold voltage for the device is studied for different biasing condition at the four gates and different physical parameter like channel length. The results are compared to the results obtained from the analytical model of threshold voltage of n-channel four gate transistor to...
This paper determines the coefficients of an empirical expression of approximated carrier generation rate in Si, Ge, GaAs, InP and Al0.3Ga0.7As solar cells for AM1.5G and AM1.5D spectrum to simplify the analysis of a (n+p) solar cell properties and offers an optimization of different parameters for silicon based solar cell. Generation rate from this expression fit closely the result obtained from...
A comparative study of two different analytical models of accumulation-mode SOI p-channel G4-FET has been reported and accuracy of the models has been observed under different parametric variation and biasing conditions. A numerical model is developed by Silvaco/ATLAS 3-D simulator which incorporates various non ideal effects like concentration dependant mobility, Shockley-Read-Hall recombination,...
Threshold voltage of a SOI four gate transistor is studied to determine its dependency on different device parameters. A surface potential based analytical model is used for studying threshold voltage and an Atlas/Silvaco 3-D numerical model is also developed for the validation of the analytical model. The numerical model incorporates non-ideal effects like Shockley-Read-Hall recombination, concentration...
The structure of silicon-on-insulator (SOI) four-gate transistor (G4-FET) and its different parameters for different biasing conditions are studied. A G4-FET simulation model was developed by Silvaco/Atlas 3-D simulator which incorporates non-ideal effects like concentration dependent mobility, Shockley-Read-Hall recombination, Auger recombination, bandgap narrowing effect. This model can be useful...
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