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This paper reports the capability of AlGaN/GaN HEMTs on Si (111) substrates for microwave power applications above 30 GHz. A current gain cut-off frequency ft=90 GHz and a maximum power gain cut-off frequency fmax=135 GHz are obtained for a 80 nm gate-length transistor. These results, associated with low lag effects, demonstrate the capability of these transistors for high performance, cost effective,...
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