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We quantitatively assess, for the first time, the capabilities of SiGe HBTs fabricated on thin-film SOI for emerging high-temperature circuit applications. The dc and ac performance of both fully-depleted and partially-depleted SiGe HBTs-on-SOI are measured up to a temperature of 330degC (for dc) and 200degC (for ac). Gummel characteristics, current gain, and output characteristics are reported. M-l...
A comprehensive investigation of reliability issues in both fully-depleted and partially-depleted SiGe HBTs-on-SOI is presented. The devices were subjected to "mixed-mode" stress at 300 K and at 77 K, and the changes in base current IB, collector resistance Rc , M-1, and AC performance were analyzed. A comparison of mixed-mode stress to conventional reverse EB bias stress is also made, and...
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