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We demonstrate a simple and novel scheme to achieve high drain breakdown voltage (BV) in a high-speed silicon-on-insulator (SOI) logic technology. In an SOI device with two FETs in series, the common floating node provides a negative feedback that limits the increase of avalanche current. This unique property of SOI provides a way to enhance the breakdown voltage by simply adding more devices in series...
The adsorption of phenol, 2-naphthol and catechol on well-defined Cu(111) surface has been investigated by using in situ scanning tunneling microscopy (STM) and electrochemical method in aqueous HClO 4 solution. All the molecules were found to form highly ordered adlayers. High-resolution STM images revealed the molecular orientation and packing arrangement in the ordered adlayers. The STM...
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