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As the feature size of interconnect technology continues to scale down to nanometer sizes, the state-of-the-art Cu interconnect is expected to run into its physical limit in the near future. Carrier scattering at surfaces and grain boundaries leads to a dramatic increase of Cu resistivity at the nanoscale, resulting increasing resistance capacitance signal delay. The Cu interconnect is becoming more...
Conventional copper conductor suffered from electromigration induced by high current density. This calls for a more reliable conductive material. Carbon nanotubes (CNTs), with excellent electrical properties and extremely high thermal conductivity, have been suggested for future interconnects. Although different integration schemes have been demonstrated for CNT interconnects, the reliability of CNT...
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