The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents an analytical model of the drain current in nanowire MOSFETs (Fig. 1). This architecture is aimed for ultra-scaled devices up to technology nodes sub-11nm and uses silicon films of a few nanometers in thickness. At these dimensions, some emerging physical phenomena can no more be neglected: short-channel effects (SCE) and quasi-ballistic transport (both due to the channel length...
Gate-All-Around (GAA) nanowire architecture is aimed to represent the ultimate integration for MOSFET up to dimensions of several nanometers. Very thin nanowires (<; 5 nm) are expected to be used in these ultimate devices, for which a new physical phenomenon emerges: the modification of the band structure compared to bulk silicon, which changes the conduction properties and affects the device characteristics...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.