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Traditional near infrared (NIR) imaging is realized by a two dimensional InGaAs photodetector (PD) array integrated with a Si readout integrated circuit active matrix. The integration between the two different semiconductor arrays seriously restrains the device size‐scalability and leads to high manufacture cost. One alternative approach is to up‐convert infrared photons to a shorter wavelength (e...
A hybrid organic/inorganic up‐converter for pixel‐less near‐infrared (NIR) imaging has been designed and demonstrated. The device is fabricated by direct tandem integration of an organic light‐emitting diode with an i‐InGaAs substrate. A good‐quality 1.5 μm NIR to 520 nm visible green light up‐conversion image with a spatial resolution of better than 6 μm is achieved.
We report a highly simplified single-mesa organic/inorganic hybrid near-infrared-to-visible imaging upconversion device (spatial resolution ∼10 μm). This device integrates an intrinsic-InGaAs substrate and an organic light emitting diode.
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