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Common-emitter and common-base SiGe power heterojunction bipolar transistors (PHBTs) with 2mum and 3mum emitter stripe widths have been fabricated and compared. The reduced base pinch resistance resulting from using a heavily doped base region has enabled excellent and equivalent RF performance from SiGe PHBTs of different emitter stripe widths. However, the total device area is saved by using wider...
We report, for the first time, on the fabrication and characterizations of multi-finger n-type Si/SiGe modulation doped FETs (MODFET) for RF power amplifications. Under bias of VDS=5V, V GS=0V and continuous wave operation, load-pull measurements at 2 GHz from a 10-finger n-MODFET with a gate width of 500 (750) mum show that a maximum output power of 12 (14) dBm, power gain at 1 dB compression of...
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