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A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of −0.045 and −0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that...
Poly crystalline thin films of ZnO and Mg x Zn 1−x O have been deposited on glass substrates with varying Mg-content under constant growth parameters. Aerosol assisted chemical vapor deposition technique has been adopted for the deposition of thin films in which we use the solution of zinc acetyl acetonate and magnesium acetate in isopropyl alcohol and O 2 is used as the carrier...
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