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This paper describes a power amplifier operating at X-band demonstrating 61% power added efficiency (PAE) at 10 GHz associated with 14W output power in CW mode. The design uses a 0.15µm GaN 3MI process from TriQuint™. The devices operate at a peak power density of 3.8W/mm at 10 GHz with a PAE higher than 48% over a 500-MHz bandwidth. The two-stage MMIC PA has a saturated gain of 19 dB at peak efficiency...
This paper describes a power amplifier operating at X-band demonstrating 61% power added efficiency (PAE) at 10 GHz associated with 14W output power in CW mode. The design uses a 0.15μm GaN 3MI process from TriQuintTM. The devices operate at a peak power density of 3.8 W/mm at 10GHz with a PAE higher than 48% over a 500-MHz bandwidth. The two-stage MMIC PA has a saturated gain of 19dB at peak efficiency...
Two broadband VHF MMIC power amplifiers using GaN HEMT transistors are described in this paper. The first circuit exhibits a PAE ranging from 85% to 51% in the 15MHz – 500MHz bandwidth. The second circuit is a self-biased design and demonstrates a peak PAE of 75% at 100MHz for 13.5W output power in a similar bandwidth. The self biased topology enables a higher bias voltage and therefore higher output...
This paper presents an envelope tracking supply modulator for a high efficiency radiofrequency power amplifier (RFPA). A wide bandwidth linear amplifier using a GaN high electron mobility transistor (HEMT) as a source follower output stage is described. A low bandwidth, high efficiency current controlled Buck converter is used to assist the linear amplifier and improve the system efficiency. Steps...
This work discusses the design of a GaN power amplifier demonstrating high efficiency over more than a decade bandwidth using coaxial baluns and transformer matching networks to achieve over a 50MHz-500 MHz bandwidth. The power amplifier demonstrates a power added efficiency of 83%–64% over full bandwidth with 15 dB compressed gain at peak PAE.
Load mismatch in RF high power amplifier leads to efficiency reduction or amplifier failure. Instead of impedance tuning, in this paper an outphasing architecture with a tunable non-isolated combiner is used to reduce sensitivity to load variations. Experimental results with two GaN class AB amplifiers at 2.14GHz show it is possible to maintain the efficiency above 50% over a wide range of impedances,...
This paper describes a fast envelope-tracking circuit capable of 10 MHz (up to 17.5 MHz) bandwidth based on RF GaN switching devices and 50 MHz switching frequency. The efficiency of the VHF converter is 84% to 90% which is comparable to a conventional DC/DC converter for spaceborne application. A demonstrator has been built and mated with a RF GaN HEMT output stage. The C/I measurement for 10–12W...
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