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The AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are suitable for discrete components in many high power and high frequency power electronics applications useful for communications, satellites, power amplifiers, inverters/converters for electric and/or hybrid vehicles. Presently, these devices are commonly grown on sapphire, silicon carbide, and recently on 100- to 200-mm diameter silicon...
Nano‐patterning of GaN‐based devices is a promising technology in the development of high output power devices. Recent researches have been focused on the realization of two‐dimensional (2D) photonic crystal (PhC) structure to improve light extraction efficiency and to control the direction of emission. In this study, we have demonstrated improved light extraction from green light emitting diode (LED)...
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