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This paper presents the high frequency characterization of a fabricated in-plane nano-electro-mechanical resonator in which the doubly clamped nano-wire acts as a suspended channel for a dual gate junction-less field-effect-transistor that is used for the resonance frequency detection. The applied DC biases to gates of the transistor were optimized to amplify the detected output signal of the resonator...
We demonstrate the first implementation of a highly doped, silicon nanowire electromechanical resonator that exploits the depletion charge modulation in a junctionless FET to transduce mechanical motion on-chip. The resonator, with a typical length between 1 and 2 μm, a total height of 45 nm and a total width of 65 nm, is coupled via two lateral 60 nm air-gap gate electrodes. A fundamental resonance...
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