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In this study, measurements are made to validate the electrical performance of a Through Silicon Via (TSV) interconnection up to 40GHz, and the results of the wideband scalable model of TSV is proposed and compared with the measured data. Measurement of the TSV structure demonstrates its advantages of low parasitic capacitance and low insertion loss at high frequency.
TSV (Through Silicon Via) is the key enabling technology for 2.5D & 3D IC packaging solution. As the 2.5D interposer design pushing towards smaller & shorter via due to I/O density and electrical performance, the warpage of thinner interposer is therefore much more challenging in thin wafer handling and assembly process. In this presentation, a TSV structure is introduced with fabricated interposer...
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